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| XF r an AMP company = RF MOSFET 2 - 175 MHz Features l l l l l Power Transistor, lOW, 28V DU2810S N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Low Noise Floor Absolute Maximum Ratinas at 25C ( Parameter 1 Drain-SourceVoltage Gate-Source Drain-Source Voltage Current 1 Symbol ) V, V OS `0s PO 1 T, T ST0 eJC ) 1 1 Rating 65 20 2.8 35' 200 -65to+150 2 1 1 Units I v V 1 I A W "C "C "Cl-W 1 Power Dissipation ( JunctionTemperature StorageTemperature Thermal Resistance Typical Device \mpedance Frequency (MHz) 30 50 *,, (OHMS) 27.0 -j 11.0 24.0 - j 15.0 *,onD (OHMS) 23.0 - j 3.0 19.0 - j 5.0 6.0 j 9.0 -j 5.0 14.0 ,I 100 18.0 -j 18.0 200 v&3 Z,, is the series equivalent 2 LOAD is the series equivalent input impedance load impedance 12.0 - j 19.0 V, 1,,=100 mA, Po,,=lO.O Watts of the device from gate to source. as measured from drain to ground. RF Test Fixture +"r;s +"m INPUT c2 Cl c3 c4 c5 C6 Rl L2 Ll L3 Ql 9-28 20 pF, UNELCU 500 pF, UNELCCI 1000 pF, UNELCO 5 uF ELECTROLYTIC 12K OHM 4 TURNS 2 TURNS 5 TURNS DU2810S M/A-COM, Inc. Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 # Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 OF Nil, 16 AWG ON JO' ID OF Nil. 16 AWG ON .35' ID OF NO. 16 AWG UN 035' ID Specifications Subject to Change Without Notice. North America: Tel. (800) 366-2266 Fax (800) 618-8883 l Asia/Pacific: |
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